MEASURED INPLANE HOLE DRIFT AND HALL-MOBILITY IN HEAVILY-DOPED STRAINED P-TYPE SI1-XGEX

被引：17

作者：

MCGREGOR, JM

MANKU, T

NOEL, JP

ROULSTON, DJ

NATHAN, A

HOUGHTON, DC

机构：

[1] Department of Electrical and Computer Engineering, University of Waterloo, Waterloo

[2] Institute for Microstructural Sciences, National Research Council, Ottawa

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 03期

关键词：

BORON-DOPED; HOLE DRIFT MOBILITY; SIGE; STRAINED LAYERS;

D O I：

10.1007/BF02661384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measured in-plane hole drift and Hall mobilities in heavily boron-doped strained Si1-xGex layers are reported. In the range of boron dopings examined (1.5-2.1 x 10(19) cm-3), the drift mobility is seen to increase with increasing germanium fraction. The Hall mobility decreases with increasing germanium fraction.

引用

页码：319 / 321

页数：3

共 15 条

[1] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J].