CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS FABRICATED BY DC MAGNETRON SPUTTERING

被引:5
作者
KOLODZIEJ, A
NOWAK, S
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D O I
10.1016/0040-6090(89)90805-5
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T [工业技术];
学科分类号
08 ;
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页码:37 / 42
页数:6
相关论文
共 8 条
[1]  
KOLODZIEJ A, 1988, ACTA PHYS POL A, V73, P495
[2]  
KOLODZIEJ A, 1989, ACTA PHYS POL A, V75, P325
[3]  
KOLODZIEJ A, 1987, 3RD C P EL TECHN POZ, P262
[4]  
KOLODZIEJ A, THIN SOLID FILMS
[5]  
LAKATOS AI, 1985, DEC P INT EL DEV M W, P428
[6]   THE CHARACTERISTICS AND PROPERTIES OF OPTIMIZED AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J].
MACKENZIE, KD ;
SNELL, AJ ;
FRENCH, I ;
LECOMBER, PG ;
SPEAR, WE .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02) :87-92
[7]  
STREET RA, APPL PHYS LETT, V48, P1986
[8]   A THIN-FILM TRANSISTOR WITH A VERY THIN A-SI-H LAYER AND ITS APPLICATION FOR AN LC PANEL [J].
TANAKA, H ;
SAKAI, T ;
SHIMBO, M ;
ARAI, S ;
YAMAZAKI, T .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (04) :311-314