HAFNIUM DIFFUSION IN ALPHA-TI

被引:24
作者
BEHAR, M [1 ]
DYMENT, F [1 ]
PEREZ, RA [1 ]
DOSSANTOS, JHR [1 ]
MALTEZ, RL [1 ]
SAVINO, EJ [1 ]
机构
[1] COMIS NACL ENERGIA ATOM,RA-1429 BUENOS AIRES,DF,ARGENTINA
来源
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1991年 / 63卷 / 05期
关键词
D O I
10.1080/01418619108213929
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The diffusion of Hf in alpha-Ti has been studied in the temperature range 823-1023 K for the first time using the Rutherford backscattering technique on films 150 angstrom thick deposited on alpha-Ti samples. The results show that the diffusion coefficients follow a non-regular Arrhenius plot. This behaviour, which has already been observed for alpha-Zr, is discussed in terms of possible intrinsic and extrinsic diffusional mechanisms.
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收藏
页码:967 / 972
页数:6
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