FULLY MONOLITHIC INSB INFRARED CCD ARRAY

[1] TUNNEL CURRENT LIMITATIONS OF NARROW BANDGAP IR CHARGE COUPLED DEVICES [J]. INFRARED PHYSICS, 1977, 17 (02): : 147 - 164

[2] PLANAR INSB PHOTODIODES FABRICATED BY BE AND MG ION-IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 753 - 756

[3] LANGAN J, UNPUBLISHED

[4] LANGAN JD, 1978, P INT ELECTRON DEVIC, P594

[5] PHILLIPS JD, 1976, 1976 P NASA JPL S CC

[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[7] ON SEPARATION OF BULK AND SURFACE COMPONENTS OF LIFETIME USING PULSED MOS CAPACITOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (05) : 577 - +

[8] SiO(2) Particulates Dispersed in CVD Reactor [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1771 - 1776

[9] Thom R. D., 1975, 1975 International Conference on the Application of Charge-Coupled Devices, P31

[10] THOM RD, 1977, JUN DEV RES C ITH

[1] TUNNEL CURRENT LIMITATIONS OF NARROW BANDGAP IR CHARGE COUPLED DEVICES [J]. INFRARED PHYSICS, 1977, 17 (02): : 147 - 164

[2] PLANAR INSB PHOTODIODES FABRICATED BY BE AND MG ION-IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 753 - 756

[3] LANGAN J, UNPUBLISHED

[4] LANGAN JD, 1978, P INT ELECTRON DEVIC, P594

[5] PHILLIPS JD, 1976, 1976 P NASA JPL S CC

[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[7] ON SEPARATION OF BULK AND SURFACE COMPONENTS OF LIFETIME USING PULSED MOS CAPACITOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (05) : 577 - +

[8] SiO(2) Particulates Dispersed in CVD Reactor [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1771 - 1776

[9] Thom R. D., 1975, 1975 International Conference on the Application of Charge-Coupled Devices, P31

[10] THOM RD, 1977, JUN DEV RES C ITH