SIZE DEPENDENCE OF THE THERMAL BROADENING OF THE EXCITON LINEWIDTH IN GAAS/GA0.7AL0.3AS SINGLE QUANTUM-WELLS

被引：66

作者：

QIANG, H

POLLAK, FH

TORRES, CMS

LEITCH, W

KEAN, AH

STROSCIO, MA

IAFRATE, GJ

KIM, KW

机构：

[1] UNIV GLASGOW, DEPT ELECTR & ELECT ENGN, NANOELECTR RES CTR, GLASGOW G12 8QQ, SCOTLAND

[2] USA, RES OFF, RES TRIANGLE PK, NC 27709 USA

[3] N CAROLINA STATE UNIV, DEPT ELECT ENGN, RALEIGH, NC 27696 USA

[4] CUNY GRAD SCH & UNIV CTR, NEW YORK, NY 10036 USA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 12期

关键词：

D O I：

10.1063/1.107554

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the temperature dependence of the linewidth, GAMMA(T), of the fundamental absorption edge in bulk GaAs and four GaAs/Ga0.7Al0.3As single quantum wells of different well width using photoreflectance. As a result of the size dependence of the exciton-longitudinal optical phonon interaction, the thermal broadening of the linewidth diminishes as the dimensionality and size of the system are reduced.

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页码：1411 / 1413

页数：3

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