SURFACE STOICHIOMETRY, STRUCTURE, AND CHEMISORPTION ON SILICON-NITRIDE STUDIED BY DIRECT RECOILING, X-RAY PHOTOELECTRON-SPECTROSCOPY, AND AUGER-ELECTRON SPECTROSCOPY

被引：25

作者：

JO, YS

SCHULTZ, JA

TACHI, S

CONTARINI, S

RABALAIS, JW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2564 / 2572

页数：9

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