SURFACE STOICHIOMETRY, STRUCTURE, AND CHEMISORPTION ON SILICON-NITRIDE STUDIED BY DIRECT RECOILING, X-RAY PHOTOELECTRON-SPECTROSCOPY, AND AUGER-ELECTRON SPECTROSCOPY

被引：25

作者：

JO, YS

SCHULTZ, JA

TACHI, S

CONTARINI, S

RABALAIS, JW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2564 / 2572

页数：9

相关论文

共 25 条

[21] METHOXYLATION OF MAGNESIUM STUDIED BY DIRECT RECOIL SPECTROSCOPY, SIMS AND XPS - CALIBRATION OF RELATIVE SURFACE HYDROGEN CONCENTRATION
SCHULTZ, JA
CONTARINI, S
JO, YS
RABALAIS, JW
[J]. SURFACE SCIENCE, 1985, 154 (01) : 315 - 330
[22] QUANTITATIVE AUGER-ELECTRON SPECTROSCOPY AND ELECTRON RANGES
SEAH, MP
[J]. SURFACE SCIENCE, 1972, 32 (03) : 703 - &
[23] SHIOTT HE, 1970, RADIAT EFF, V6, P107
[24] ION-BEAM CRYSTALLOGRAPHY OF SILICON SURFACES .2. SI(100)-(2X1)
TROMP, RM
SMEENK, RG
SARIS, FW
CHADI, DJ
[J]. SURFACE SCIENCE, 1983, 133 (01) : 137 - 158
[25] BACKGROUND FORMATION IN SIMS ANALYSIS OF HYDROGEN, CARBON, NITROGEN AND OXYGEN IN SILICON
WITTMAACK, K
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 327 - 332