ELECTRICAL-PROPERTIES OF GAAS/GAN/GAAS SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR STRUCTURES

被引：50

作者：

MARTIN, G ^{[1
]}

STRITE, S ^{[1
]}

THORNTON, J ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 21期

关键词：

D O I：

10.1063/1.104875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the current-voltage (IV) characteristics of GaAs/GaN/GaAs semiconductor-insulator-semiconductor structures as a function of temperature. IV measurements show a strong temperature dependence indicating a thermal distribution of carriers flowing over a barrier. From these data we deduce an effective conduction band barrier of 0.9 eV between GaAs and GaN.

引用

页码：2375 / 2377

页数：3