ALLOYED, THIN-BASE DIODE CAPACITORS FOR PARAMETRIC AMPLIFICATION

[1] BAKANOWSKI, 1957, JUL AIEE IRE SEM DEV

[2] BLOOM S, 1957, RCA REV, V18, P578

[3] BRIDGES TJ, 1958, P IRE, V46, P494

[4] HALL RC, UNPUBLISHED

[5] GAIN, BAND WIDTH, AND NOISE CHARACTERISTICS OF THE VARIABLE-PARAMETER AMPLIFIER [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (09) : 1321 - 1331

[6] HEFFNER H, 1957, 1957 EL DEV M

[7] HINES ME, 1957, JUL AIEE IRE SEM DEV

[8] HUNTER LP, 1956, HDB SEMICONDUCTOR EL, P7

[9] SOME GENERAL PROPERTIES OF NONLINEAR ELEMENTS .1. GENERAL ENERGY RELATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (07): : 904 - 913

[10] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[1] BAKANOWSKI, 1957, JUL AIEE IRE SEM DEV

[2] BLOOM S, 1957, RCA REV, V18, P578

[3] BRIDGES TJ, 1958, P IRE, V46, P494

[4] HALL RC, UNPUBLISHED

[5] GAIN, BAND WIDTH, AND NOISE CHARACTERISTICS OF THE VARIABLE-PARAMETER AMPLIFIER [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (09) : 1321 - 1331

[6] HEFFNER H, 1957, 1957 EL DEV M

[7] HINES ME, 1957, JUL AIEE IRE SEM DEV

[8] HUNTER LP, 1956, HDB SEMICONDUCTOR EL, P7

[9] SOME GENERAL PROPERTIES OF NONLINEAR ELEMENTS .1. GENERAL ENERGY RELATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (07): : 904 - 913

[10] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884