PREPARATION OF OXIDE THIN-FILMS BY LASER ABLATION

被引：14

作者：

OGASAWARA, M ^{[1
]}

SHIMIZU, M ^{[1
]}

SHIOSAKI, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,SAKYO KU,KYOTO 60601,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期

关键词：

LASER ABLATION; KRF EXCIMER LASER; C-AXIS ORIENTATION; ZNO FILMS; PEROVSKITE; PZT FILMS; RHOMBOHEDRAL;

D O I：

10.1143/JJAP.31.2971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO and PbZr0.9Ti0.1O3 (PZT) thin films were prepared by laser ablation using a KrF excimer laser. The c-axis-oriented ZnO thin films were successfully grown at substrate temperatures of 180-400-degrees-C in Ar and Ar + O2. The deposition rates of the films obtained ranged from 150 to 700 angstrom/min, and these values were larger than those of films grown by conventional magnetron sputtering. Perovskite-type PZT thin films with a rhombohedral structure were also successfully grown at 680-degrees-C. The deposition rates of the films obtained ranged from 40 to 240 angstrom/min, and these values were also larger than those of films grown by magnetron sputtering.

引用

页码：2971 / 2974

页数：4

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