SCHOTTKY DIODES OF POLY(3-UNDECYLTHIOPHENE) CONTAINING FULLERENE C-60

被引：13

作者：

KUO, CS ^{[1
]}

WAKIM, FG ^{[1
]}

SENGUPTA, SK ^{[1
]}

TRIPATHY, SK ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,DEPT ELECT ENGN,LOWELL,MA 01854

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 87卷 / 02期

关键词：

13;

D O I：

10.1016/0038-1098(93)90337-M

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The conducting polymer poly(3-undecylthiophene) (PUT) was doped with fullerene C60. The effects of doping on the current-voltage characteristics of aluminum Schottky contacts in the dark and under 488 nm laser illumination were investigated. C60 doping produced near ideal Schottky behavior, changed the optical absorption and introduced an acceptor level.

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收藏

页码：115 / 117

页数：3

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