RADIATION-INDUCED DEGRADATION OF OHMIC CONTACTS

被引:4
作者
BLUNDELL, R [1 ]
MORGAN, DV [1 ]
HOWES, MJ [1 ]
机构
[1] UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS2 9JT,ENGLAND
关键词
D O I
10.1049/el:19770349
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:483 / 484
页数:2
相关论文
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Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048
[2]   COMPENSATION FROM IMPLANTATION IN GAAS [J].
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KENNEDY, JK ;
YANG, AC .
APPLIED PHYSICS LETTERS, 1973, 23 (11) :615-616
[3]  
NELSON RS, 1973, CHANNELING, P259
[4]  
STRONG PS, COMMUNICATION
[5]  
TAYLOR PD, 1975, SOLID STATE ELECTRON, V19, P473