3-DIMENSIONAL FLOW EFFECTS IN SILICON CVD IN HORIZONTAL REACTORS

[1] NOVEL REACTOR FOR HIGH VOLUME LOW-COST SILICON EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 97 - 107

[2] TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 317 - 320

[3] PYROLYSIS OF DISILANE AND RATE CONSTANTS OF SILENE INSERTION REACTIONS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 321 (1546): : 341 - &

[4] BRILEY WR, 1974, J COMPUT PHYS, V14, P8, DOI 10.1016/0021-9991(74)90002-3

[5] KINETICS OF THE DEPOSITION OF SILICON BY SILANE PYROLYSIS AT LOW-TEMPERATURES AND ATMOSPHERIC-PRESSURE [J]. THIN SOLID FILMS, 1979, 60 (01) : 19 - 25

[6] BUSSE FS, 1978, REP PROG PHYS, P41

[7] CHANG CJ, 1982, THESIS MIT

[8] Chilukuri R., 1980, Numerical Heat Transfer, V3, P169, DOI 10.1080/01495728008961753

[9] CHIU KC, IN PRESS INT J HEAT

[10] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .3. THE SIH4-H2-N2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 443 - 452

[1] NOVEL REACTOR FOR HIGH VOLUME LOW-COST SILICON EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 97 - 107

[2] TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 317 - 320

[3] PYROLYSIS OF DISILANE AND RATE CONSTANTS OF SILENE INSERTION REACTIONS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 321 (1546): : 341 - &

[4] BRILEY WR, 1974, J COMPUT PHYS, V14, P8, DOI 10.1016/0021-9991(74)90002-3

[5] KINETICS OF THE DEPOSITION OF SILICON BY SILANE PYROLYSIS AT LOW-TEMPERATURES AND ATMOSPHERIC-PRESSURE [J]. THIN SOLID FILMS, 1979, 60 (01) : 19 - 25

[6] BUSSE FS, 1978, REP PROG PHYS, P41

[7] CHANG CJ, 1982, THESIS MIT

[8] Chilukuri R., 1980, Numerical Heat Transfer, V3, P169, DOI 10.1080/01495728008961753

[9] CHIU KC, IN PRESS INT J HEAT

[10] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .3. THE SIH4-H2-N2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 443 - 452