THE GROWTH AND PHYSICAL-PROPERTIES OF HIGH-QUALITY PSEUDOMORPHIC INXGA1-XAS HEMT STRUCTURES

被引：3

作者：

MACE, DR ^{[1
]}

GRIMSHAW, MP ^{[1
]}

RITCHIE, DA ^{[1
]}

CHURCHILL, AC ^{[1
]}

PEPPER, M ^{[1
]}

JONES, GAC ^{[1
]}

机构：

[1] TOSHIBA CAMBRIDGE RES CTR,CAMBRIDGE CB4 4WE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90692-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A series of high quality modulation doped GaAs-AlGaAs heterostructures incorporating a strained 10 nm InxGa1-xAs layer at the hetero-interface have been grown. The indium mole fraction, x, was varied from 0 (the control) to 0.25 in 0.05 steps. Other growth conditions were unaltered for all wafers. The variation of electronic and structural properties of the wafers was measured as a function of x with a view to optimizing the structure for use in one-dimensional ballistic transport measurements.

引用

页码：601 / 605

页数：5

共 12 条

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