HIGH-ENERGY IMPLANTATION OF B-10 AND B-11 INTO (100) SILICON IN CHANNEL AND IN RANDOM DIRECTION

被引：7

作者：

BOGEN, S ^{[1
]}

GONG, L ^{[1
]}

FREY, L ^{[1
]}

RYSSEL, H ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,LEHRSTUHL ELEKTR BAUELEMENTE,W-8520 ERLANGEN,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷 / pt 2期

关键词：

D O I：

10.1016/0168-583X(93)96203-O

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Channeling implants of B-11 and B-10 were performed into (100) silicon from 0.5 to 5 MeV. Comparison with the range of TRIM calculations shows that the electronic stopping Power is overestimated for energies above 1 MeV. Monte Carlo simulations for B-11 implants into the [100] channel of silicon by Hobler agree very well with the experimental data for energies up to 2 MeV. Above that energy, the results are similar to the TRIM results. By subtraction of the random part from channeling profiles, the range straggling of B-11 in the [100] channel could be determined from the remaining distributions of exclusively channeled particles. No random profiles of B-10 were at the time available to determine the range straggling of this isotope. The isotopic effect of the B-10 and B-11 ranges was found to reach a maximum of about 5% around 1 MeV. For higher energies, a decrease of this effect was observed.

引用

页码：659 / 662

页数：4

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