ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF IMPLANTATION DOPED SILICON BY INFRARED REFLECTION

[1] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[2] CROWDER BL, 1971, ION IMPLANTATION, P87

[3] CSPREGI L, 1975, PHYS LETT A, V54, P157

[4] CSPREGI L, 1976, APPL PHYS LETT, V29, P92

[5] ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 182 - 184

[6] ESTIMATION OF IMPURITY PROFILES IN ION-IMPLANTED AMORPHOUS TARGETS USING JOINED HALF-GAUSSIAN DISTRIBUTIONS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 568 - 569

[7] GUSEV VM, 1971, SOV PHYS SEMICOND+, V5, P737

[8] Heavens O.S, 1991, OPTICAL PROPERTIES T

[9] HEHL K, UNPUB PHYS STATUS SO

[10] HOROWITZ G, 1977, PHYS STATUS SOLIDI A, V39, P533, DOI 10.1002/pssa.2210390221

[1] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[2] CROWDER BL, 1971, ION IMPLANTATION, P87

[3] CSPREGI L, 1975, PHYS LETT A, V54, P157

[4] CSPREGI L, 1976, APPL PHYS LETT, V29, P92

[5] ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 182 - 184

[6] ESTIMATION OF IMPURITY PROFILES IN ION-IMPLANTED AMORPHOUS TARGETS USING JOINED HALF-GAUSSIAN DISTRIBUTIONS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 568 - 569

[7] GUSEV VM, 1971, SOV PHYS SEMICOND+, V5, P737

[8] Heavens O.S, 1991, OPTICAL PROPERTIES T

[9] HEHL K, UNPUB PHYS STATUS SO

[10] HOROWITZ G, 1977, PHYS STATUS SOLIDI A, V39, P533, DOI 10.1002/pssa.2210390221