DESIGN CRITERIA FOR HIGHLY-EFFICIENT OPERATION OF 1.3-MU-M INP-BASED STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS AT ELEVATED-TEMPERATURES

被引：14

作者：

SEKI, S

OOHASHI, H

SUGIURA, H

HIRONO, T

YOKOYAMA, K

机构：

[1] NTT Opto-electronics Laboratories, Atsugi, Kanagawa, 243–01, 3–1 Morinosato, Wakamiya

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 08期

关键词：

D O I：

10.1109/68.403990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We derive a basic design rule for highly-efficient operation of 1.3-mu m InP-based strained-layer (SL) multiple-quantum-well (MQW) lasers at elevated temperatures on the basis of a self-consistent numerical approach including the Poisson equation and effective-mass equations. Following the derived design rule, high-efficiency (0.55 W/A at 363 K) and high-power (over 35 mW at 363 K) InP-based SL-MQW lasers have been fabricated.

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收藏

页码：839 / 841

页数：3

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