THEORETICAL-ANALYSIS OF TEMPERATURE SENSITIVITY OF DIFFERENTIAL GAIN IN 1.55-MU-M INGAASP-INP QUANTUM-WELL LASERS

被引：7

作者：

SEKI, S

YOKOYAMA, K

机构：

[1] NIT Opto-electronics Laboratories, Atsugi, Kanagawa, 243–01

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 03期

关键词：

D O I：

10.1109/68.372736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the temperature sensitivity of the differential gain in InGaAsP-InP strained-layer (SL) quantum-well (QW) lasers operating at a wavelength of 1.55 mu m. Electrostatic deformation in conduction-band and valence-band profiles is taken into account by solving Poisson's equation and the effective-mass equations for conduction and valence bands in a self-consistent manner, We demonstrate that electrostatic deformation in both band profiles plays a significant role in determining the temperature sensitivity of the differential gain in 1.55-mu m InGaAsP-InP SL QW lasers. The physical mechanism for limiting the differential gain at elevated temperatures is also discussed.

引用

收藏

页码：251 / 253

页数：3

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