INFLUENCE OF INTER-CARRIER SCATTERING ON HOT-ELECTRON DISTRIBUTION FUNCTION IN GAAS

被引：54

作者：

TAKENAKA, N

INOUE, M

INUISHI, Y

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka

[2] Cornell University, Phillips Hall, Ithaca

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1979年 / 47卷 / 03期

关键词：

D O I：

10.1143/JPSJ.47.861

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Influences of carrier-carrier scattering on the electron distribution function in GaAs has been examined by the Monte Carlo calculation taking into account electron-electron and/or electron-hole scatterings. The calculated results were compared with the experimental distribution functions determined from the band-to-band recombination spectra under high electric fields. © 1979, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.

引用

页码：861 / 868

页数：8

共 18 条

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