FINITE INTERFACE EFFECTS FOR THIN GAINAS/INP QUANTUM-WELLS GROWN BY LP-MOVPE WITH A GROWTH INTERRUPTION SEQUENCE

被引：40

作者：

CAMASSEL, J ^{[1
]}

LAURENTI, JP ^{[1
]}

JUILLAGUET, S ^{[1
]}

REINHARDT, F ^{[1
]}

WOLTER, K ^{[1
]}

KURZ, H ^{[1
]}

GRUTZMACHER, D ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,W-5100 AACHEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90518-A

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A prerequisite for growing quantum wells at the industrial level is to control the interface roughness. This is a dominant problem for very thin films and, in this respect, growth interruption sequences have been proposed. In this work, we investigate the interface layers, produced between two InP barriers, by a growth interruption sequence of 8 s: 6 s are under phosphine and 4 s under arsine. We find the resulting build-up of ultrathin (approximately-2 MLs thick) layers of InAsP, strained between the two limiting barriers.

引用

页码：543 / 548

页数：6