HIGH-EFFICIENCY ENERGY UP-CONVERSION BY AN AUGER FOUNTAIN AT AN INP-ALINAS TYPE-II HETEROJUNCTION

被引：107

作者：

SEIDEL, W

TITKOV, A

ANDRE, JP

VOISIN, P

VOOS, M

机构：

[1] LABS ELECTR PHILIPS,F-94453 LIMEIL BREVANNES,FRANCE

[2] RUSSIAN ACAD SCI,AF IOFFE PHYS TECH INST,ST PETERSBURG,RUSSIA

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.73.2356

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Luminescence of bulk InP at 1.41 eV is observed when photoexciting a type-II InP-AIInAs single heterojunction above the spatially indirect band gap at 1.23 eV. This energy up-conversion effect, which is extremely efficient even at moderate pump power, is due to an ''Auger fountain'' mechanism producing high energy holes which redistribute over the heterostructure and recombine with native electrons in the InP layer. The analysis of this phenomenon suggests technological applications as well as analogies with other fields like photochemistry.

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页码：2356 / 2359

页数：4

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