OBSERVATION OF LASER-EMISSION IN AN INP-ALINAS TYPE-II SUPERLATTICE

被引：30

作者：

LUGAGNEDELPON, E ^{[1
]}

VOISIN, P ^{[1
]}

VOOS, M ^{[1
]}

ANDRE, JP ^{[1
]}

机构：

[1] LAB ELECTR PHILIPS, F-94453 LIMEIL BREVANNES, FRANCE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 25期

关键词：

D O I：

10.1063/1.106760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of laser emission at low temperature from an optically pumped InP-AlInAs superlattice grown by metalorganic chemical vapor deposition. Independent measurements of low level photoluminescence excitation and optical absorption show that laser emission occurs between spatially separated conduction and valence levels localized, respectively, in InP and AlInAs, with a calculated wave function overlap as low as 0.04. High radiative efficiency observed in this system is believed to be a genuine consequence of the type II band lineup.

引用

页码：3087 / 3089

页数：3

共 6 条

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