ELECTRONIC-PROPERTIES OF O-2 ON CS OR NA OVERLAYERS ADSORBED ON SI(100)2X1 FROM ROOM-TEMPERATURE TO 650-DEGREES-C

被引：107

作者：

SOUKIASSIAN, P

BAKSHI, MH

HURYCH, Z

GENTLE, TM

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,STOUGHTON,WI 53589

[2] NO ILLINOIS UNIV,DEPT PHYS,DE KALB,IL 60115

[3] DOW CORNING CORP,MIDLAND,MI 48640

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.35.4176

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4176 / 4179

页数：4

共 34 条

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