RESONANCE RAMAN-SCATTERING IN PURE AND ULTRAHEAVILY DOPED P-TYPE GERMANIUM

被引：7

作者：

ALONSO, MI

CARDONA, M

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.37.10107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10107 / 10110

页数：4

共 20 条

[1]

APPEL WH, 1985, THESIS U STUTTGART

[2] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[3] ABSOLUTE RAMAN-SCATTERING EFFICIENCIES OF SOME ZINCBLENDE AND FLUORITE-TYPE MATERIALS [J].

CALLEJA, JM ;

VOGT, H ;

CARDONA, M .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 45 (02) :239-254

[4]

CARDONA M, 1982, TOP APPL PHYS, V50, P19

[5] RESONANT RAMAN SCATTERING IN GERMANIUM [J].

CERDEIRA, F ;

CARDONA, M ;

DREYBRODT, W .

SOLID STATE COMMUNICATIONS, 1972, 10 (07) :591-+

[6] SADDLE-POINT EXCITONS IN SOLIDS AND SUPERLATTICES [J].

CHU, H ;

CHANG, YC .

PHYSICAL REVIEW B, 1987, 36 (05) :2946-2949

[7] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[8] ABSOLUTE CROSS-SECTION FOR RAMAN-SCATTERING BY PHONONS IN SILICON [J].

GRIMSDITCH, M ;

CARDONA, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 102 (01) :155-161

[9]

HANSEN M, 1958, CONSTITUTION BINARY, P743

[10] THEORETICAL-ANALYSIS OF OPTICAL-PHONON DEFORMATION POTENTIALS IN SEMICONDUCTORS [J].

HERNANDEZCABRERA, AJ ;

SANCHEZDEHESA, J ;

TEJEDOR, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (12) :2251-2259

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