FLUORINE-DOPED TIN DIOXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引:68
作者
MARUYAMA, T
TABATA, K
机构
[1] Department of Chemical Engineering, Faculty of Engineering, Kyoto University, Sakyo-ku, Kyoto 606, Yoshida-Honmachi
关键词
D O I
10.1063/1.346221
中图分类号
O59 [应用物理学];
学科分类号
摘要
Transparent conductive tin dioxide thin films were prepared by a low-temperature atmospheric-pressure chemical vapor deposition method in air. The raw material was tin(II) trifluoroacetate. At a reaction temperature above 250 °C, polycrystalline thin films were obtained with a high deposition rate. This chemical vapor deposition method effectively incorporates F atoms into a crystalline structure and consequently maximizes the carrier concentration, yielding fluorine-doped SnO2 films of very low resistivity. For the 1260-nm-thick film deposited at 400 °C, the resistivity was 5.92×10-4 Ω cm, and the sheet resistance was 4.69 Ω/D'Alembertian sign. The deposition condition, structure, and characteristics of films were compared to the corresponding values in the chemical vapor depositions of SnO2 from tin(II) acetate.
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页码:4282 / 4285
页数:4
相关论文
共 3 条
[1]   ANTIMONY-DOPED TIN OXIDE-FILMS DEPOSITED BY THE OXIDATION OF TETRAMETHYLTIN AND TRIMETHYLANTIMONY [J].
CHOW, TP ;
GHEZZO, M ;
BALIGA, BJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1040-1045
[2]  
MUTOH R, 1972, OYO BUTURI, V41, P41
[3]   CHARACTERIZATION OF FLUORINE-DOPED SNO2 FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].
SAXENA, AK ;
THANGARAJ, R ;
SINGH, SP ;
AGNIHOTRI, OP .
THIN SOLID FILMS, 1985, 131 (1-2) :121-129