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ANTIMONY-DOPED TIN OXIDE-FILMS DEPOSITED BY THE OXIDATION OF TETRAMETHYLTIN AND TRIMETHYLANTIMONY
被引:27
作者
:
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
CHOW, TP
GHEZZO, M
论文数:
0
引用数:
0
h-index:
0
GHEZZO, M
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
BALIGA, BJ
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1982年
/ 129卷
/ 05期
关键词
:
D O I
:
10.1149/1.2124012
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1040 / 1045
页数:6
相关论文
共 20 条
[1]
CHEMICAL COMPOSITION AND ELECTRICAL PROPERTIES OF TIN OXIDE-FILMS PREPARED BY VAPOR-DEPOSITION
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FAC,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
ABOAF, JA
MARCOTTE, VC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FAC,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
MARCOTTE, VC
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FAC,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
CHOU, NJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(05)
: 701
-
702
[2]
AITCHISON RE, 1954, AUSTRALIAN J APPL SC, V5, P10
[3]
PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(06)
: 941
-
944
[4]
ELECTROCHEMICAL PATTERNING OF TIN OXIDE-FILMS
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(07)
: 1059
-
1060
[5]
TRANSPARENT METAL-OXIDE ELECTRODE CID IMAGER
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
BROWN, DM
GHEZZO, M
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
GHEZZO, M
GARFINKEL, M
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
GARFINKEL, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(02)
: 196
-
200
[6]
MECHANISM OF CVD THIN-FILM SNO2 FORMATION
GHOSHTAGORE, RN
论文数:
0
引用数:
0
h-index:
0
GHOSHTAGORE, RN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(01)
: 110
-
117
[7]
TRANSPARENT CONDUCTING COATINGS
HAACKE, G
论文数:
0
引用数:
0
h-index:
0
机构:
AMER CYANAMID CO, STAMFORD, CT 06904 USA
AMER CYANAMID CO, STAMFORD, CT 06904 USA
HAACKE, G
[J].
ANNUAL REVIEW OF MATERIALS SCIENCE,
1977,
7
: 73
-
93
[8]
HOLLAND L, 1963, VACUUM DEPOSITION TH, P493
[9]
PREPARATION AND PROPERTIES OF ARSENIC-DOPED TIN OXIDE-FILMS
HSU, YS
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
HSU, YS
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(08)
: 1434
-
1435
[10]
THE EFFECT OF PHOSPHORUS DOPING ON TIN OXIDE-FILMS MADE BY THE OXIDATION OF PHOSPHINE AND TETRAMETHYLTIN .2. ELECTRICAL-PROPERTIES
HSU, YS
论文数:
0
引用数:
0
h-index:
0
HSU, YS
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(07)
: 1595
-
1599
←
1
2
→
共 20 条
[1]
CHEMICAL COMPOSITION AND ELECTRICAL PROPERTIES OF TIN OXIDE-FILMS PREPARED BY VAPOR-DEPOSITION
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FAC,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
ABOAF, JA
MARCOTTE, VC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FAC,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
MARCOTTE, VC
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FAC,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
CHOU, NJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(05)
: 701
-
702
[2]
AITCHISON RE, 1954, AUSTRALIAN J APPL SC, V5, P10
[3]
PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(06)
: 941
-
944
[4]
ELECTROCHEMICAL PATTERNING OF TIN OXIDE-FILMS
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(07)
: 1059
-
1060
[5]
TRANSPARENT METAL-OXIDE ELECTRODE CID IMAGER
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
BROWN, DM
GHEZZO, M
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
GHEZZO, M
GARFINKEL, M
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301
GARFINKEL, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(02)
: 196
-
200
[6]
MECHANISM OF CVD THIN-FILM SNO2 FORMATION
GHOSHTAGORE, RN
论文数:
0
引用数:
0
h-index:
0
GHOSHTAGORE, RN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(01)
: 110
-
117
[7]
TRANSPARENT CONDUCTING COATINGS
HAACKE, G
论文数:
0
引用数:
0
h-index:
0
机构:
AMER CYANAMID CO, STAMFORD, CT 06904 USA
AMER CYANAMID CO, STAMFORD, CT 06904 USA
HAACKE, G
[J].
ANNUAL REVIEW OF MATERIALS SCIENCE,
1977,
7
: 73
-
93
[8]
HOLLAND L, 1963, VACUUM DEPOSITION TH, P493
[9]
PREPARATION AND PROPERTIES OF ARSENIC-DOPED TIN OXIDE-FILMS
HSU, YS
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
HSU, YS
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(08)
: 1434
-
1435
[10]
THE EFFECT OF PHOSPHORUS DOPING ON TIN OXIDE-FILMS MADE BY THE OXIDATION OF PHOSPHINE AND TETRAMETHYLTIN .2. ELECTRICAL-PROPERTIES
HSU, YS
论文数:
0
引用数:
0
h-index:
0
HSU, YS
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(07)
: 1595
-
1599
←
1
2
→