PREPARATION AND PROPERTIES OF ARSENIC-DOPED TIN OXIDE-FILMS

被引：23

作者：

HSU, YS

GHANDHI, SK

机构：

[1] Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期

关键词：

conduction; contacts; CVD; films;

D O I：

10.1149/1.2130539

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

收藏

页码：1434 / 1435

页数：2

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