MECHANISM OF CVD THIN-FILM SNO2 FORMATION

[1] CHEMICAL COMPOSITION AND ELECTRICAL PROPERTIES OF TIN OXIDE-FILMS PREPARED BY VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) : 701 - 702

[2] PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) : 941 - 944

[3] BALIGA BJ, 1975, DEC P IEEE EL DEV M, P105

[4] DUB M, 1968, ORGANOMETALLIC COMPO, V3, P158

[5] GROWTH CHARACTERISTICS OF RUTILE FILM BY CHEMICAL VAPOR DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1310 - +

[6] MECHANISM OF HETEROGENEOUS DEPOSITION OF THIN FILM RUTILE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 529 - +

[7] Grove A. S, 1967, PHYS TECHNOLOGY SEMI, P7

[8] HIRTH JP, 1966, VAPOR DEPOSITION, P126

[9] A KINETIC STUDY OF THE SYSTEM SI-SICL4 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 879 - 881

[10] SCHLICHTING H, 1960, BOUNDARY LAYER THEOR, pCH7

[1] CHEMICAL COMPOSITION AND ELECTRICAL PROPERTIES OF TIN OXIDE-FILMS PREPARED BY VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) : 701 - 702

[2] PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) : 941 - 944

[3] BALIGA BJ, 1975, DEC P IEEE EL DEV M, P105

[4] DUB M, 1968, ORGANOMETALLIC COMPO, V3, P158

[5] GROWTH CHARACTERISTICS OF RUTILE FILM BY CHEMICAL VAPOR DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1310 - +

[6] MECHANISM OF HETEROGENEOUS DEPOSITION OF THIN FILM RUTILE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 529 - +

[7] Grove A. S, 1967, PHYS TECHNOLOGY SEMI, P7

[8] HIRTH JP, 1966, VAPOR DEPOSITION, P126

[9] A KINETIC STUDY OF THE SYSTEM SI-SICL4 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 879 - 881

[10] SCHLICHTING H, 1960, BOUNDARY LAYER THEOR, pCH7