OBSERVATIONS OF ANISOTROPIC DIFFUSED LAYER SHEET RESISTANCE IN EFG SILICON RIBBON SOLAR-CELLS

被引:5
作者
SERREZE, HB
RAVI, KV
HARIRAO, CV
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10.1063/1.90102
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O59 [应用物理学];
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页码:503 / 505
页数:3
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共 8 条
[1]   REPEATED REMOVAL OF THIN-LAYERS OF SILICON BY ANODIC-OXIDATION [J].
BARBER, HD ;
LO, HB ;
JONES, JE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) :1404-1408
[2]  
DESTEFANO TH, 1977, APPL PHYS LETT, V30, P351
[3]   ORIENTATION DEPENDENCE OF DEFECT STRUCTURE IN EFG SILICON RIBBONS [J].
GARONE, LC ;
RAO, CVH ;
MORRISON, AD ;
SUREK, T ;
RAVI, KV .
APPLIED PHYSICS LETTERS, 1976, 29 (08) :511-513
[4]  
RAO CNR, UNPUBLISHED
[5]   OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].
SANDERS, IR ;
DOBSON, PS .
PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&
[6]  
SOOD AK, 1975, SPR M EL CHEM SOC TO
[7]   DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].
TANNENBAUM, E .
SOLID-STATE ELECTRONICS, 1961, 2 (2-3) :123-132
[8]  
van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1