MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS ON EPITAXIAL COSI2 FILMS ON SI(111)

被引：4

作者：

CHAND, N

PHILLIPS, JM

LUNARDI, LM

CHU, SNG

WECHT, KW

PEOPLE, R

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：703 / 707

页数：5

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共 16 条

[1] CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE
BALLINGALL, JM
WOOD, CEC
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 947 - 949
[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING
CHAND, N
PEOPLE, R
BAIOCCHI, FA
WECHT, KW
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817
[3] CHO AY, 1971, I PHYS C SER, V9, P18
[4] INSITU STUDY OF THE MOLECULAR-BEAM EPITAXY OF COSI2 ON (111) SI BY TRANSMISSION ELECTRON-MICROSCOPY AND DIFFRACTION
GIBSON, JM
BATSTONE, JL
TUNG, RT
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 45 - 47
[5] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED
HEIBLUM, M
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 343 - 366
[6] OPERATION OF THE SI/COSI2/SI HETEROSTRUCTURE TRANSISTOR
HENSEL, JC
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (09) : 522 - 524
[7] ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183
[8] ELECTRICAL INFLUENCE OF PINHOLES IN METAL-BASE TRANSISTORS
PFISTER, JC
ROSENCHER, E
BELHADDAD, K
PONCET, A
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (09) : 907 - 914
[9] POATE JM, 1986, IEEE SPECTRUM, P38
[10] Sze S. M., 1969, PHYSICS SEMICONDUCTO, P567