SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING

被引：144

作者：

CHAND, N

PEOPLE, R

BAIOCCHI, FA

WECHT, KW

CHO, AY

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 13期

关键词：

D O I：

10.1063/1.97556

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：815 / 817

页数：3

共 14 条

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