MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SI(211)

被引：106

作者：

UPPAL, PN

KROEMER, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 06期

关键词：

D O I：

10.1063/1.335987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2195 / 2203

页数：9

共 30 条

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