GAAS/ALGAAS MODFETS GROWN ON (100) GE

[1] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 207 - 208

[2] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 967 - 969

[3] MASSELINK WT, 1984, UNPUB APPL PHYS 0815

[4] MASSELINK WT, UNPUB OPTICAL PROPER

[5] MILLER DL, 1981, APPL PHYS LETT, V37, P1104

[6] Milnes A. G., 1972, HETEROJUNCTIONS META, P58

[7] ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) : 249 - 254

[8] MOLECULAR-BEAM EPITAXY OF GE AND GA1-XALXAS ULTRA THIN-FILM SUPER-LATTICES [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) : 172 - 178

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1149 - 1151

[10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAP ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2916 - 2927

[1] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 207 - 208

[2] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 967 - 969

[3] MASSELINK WT, 1984, UNPUB APPL PHYS 0815

[4] MASSELINK WT, UNPUB OPTICAL PROPER

[5] MILLER DL, 1981, APPL PHYS LETT, V37, P1104

[6] Milnes A. G., 1972, HETEROJUNCTIONS META, P58

[7] ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) : 249 - 254

[8] MOLECULAR-BEAM EPITAXY OF GE AND GA1-XALXAS ULTRA THIN-FILM SUPER-LATTICES [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) : 172 - 178

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1149 - 1151

[10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAP ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2916 - 2927