MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SI(211)

被引：106

作者：

UPPAL, PN

KROEMER, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 06期

关键词：

D O I：

10.1063/1.335987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2195 / 2203

页数：9

共 30 条

[21] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J].

TARUI, Y ;

KOMIYA, Y ;

HARADA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :118-&

[22] MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS ON SI [J].

TSAUR, BY ;

METZE, GM .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :535-536

[23] MBE GROWTH OF GAAS AND GAP ON SI(211) [J].

UPPAL, PN ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :603-603

[24]

UPPAL PN, UNPUB

[25] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J].

WANG, WI .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1149-1151

[26] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) AND GE(100) [J].

WANG, WI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :552-553

[27] ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE [J].

WINDHORN, TH ;

METZE, GM ;

TSAUR, BY ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :309-311

[28] REDUCTION OF OXIDES ON SILICON BY HEATING IN A GALLIUM MOLECULAR-BEAM AT 800-DEGREES-C [J].

WRIGHT, S ;

KROEMER, H .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :210-211

[29] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAP ON SI [J].

WRIGHT, SL ;

KROEMER, H ;

INADA, M .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2916-2927

[30] POLAR-ON-NONPOLAR EPITAXY - SUB-LATTICE ORDERING IN THE NUCLEATION AND GROWTH OF GAP ON SI (211) SURFACES [J].

WRIGHT, SL ;

INADA, M ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :534-539

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