MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) AND GE(100)

被引：6

作者：

WANG, WI

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583176

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：552 / 553

页数：2

共 9 条

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[Anonymous], UNPUB

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[3] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J].

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[4] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES [J].

FLETCHER, RM ;

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BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :967-969

[5]

HEIBLUM M, UNPUB

[6]

ISHIDA T, 1984, 42ND ANN DEV RES C S

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ISHIZAKA A, 1982, 2ND INT C MBE CST TO

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J].

WANG, WI .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1149-1151

[9]

ZHELUDKOV VM, 1977, SOV PHYS SEMICOND+, V11, P547

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