MBE GROWTH OF GAAS AND GAP ON SI(211)

被引：3

作者：

UPPAL, PN

KROEMER, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：603 / 603

页数：1

共 8 条

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[5]

SULLIVAN GJ, 1983, THESIS U CALIFORNIA

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J].

WANG, WI .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1149-1151

[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAP ON SI [J].

WRIGHT, SL ;

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[8]

WRIGHT SL, 1982, J VAC SCI TECHNOL, V21, P532

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