1.3-MU-M INGAASP RIDGE WAVE-GUIDE LASER ON GAAS AND SILICON SUBSTRATES BY THIN-FILM TRANSFER

被引：12

作者：

SHIEH, CL ^{[1
]}

CHI, JY ^{[1
]}

ARMIENTO, CA ^{[1
]}

HAUGSJAA, PO ^{[1
]}

NEGRI, A ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,NEW YORK,NY 10032

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 10期

关键词：

LASERS; SEMICONDUCTOR LASERS; WAVE-GUIDE COMPONENTS;

D O I：

10.1049/el:19910532

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new thin-film transfer technique has been developed that eliminates the handling of fragile, free-standing films. This process was used to demonstrate the first long wavelength laser fabricated on a host substrate by a thin-film transfer technique. Ridge waveguide lasers operating at a wavelength of 1.3-mu-m were fabricated on both GaAs and silicon substrates. The light-current characteristics of these transferred lasers were comparable to conventional lasers.

引用

页码：850 / 851

页数：2

共 4 条

[1] POLLENTIER I, 1990, ELECTRON LETT, V26, P925
[2] Yablonovitch E., 1989, IEEE Photonics Technology Letters, V1, P41, DOI 10.1109/68.91003
[3] EXTREME SELECTIVITY IN THE LIFT-OFF OF EPITAXIAL GAAS FILMS
YABLONOVITCH, E
GMITTER, T
HARBISON, JP
BHAT, R
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2222 - 2224
[4] GRAFTED GAAS DETECTORS ON LITHIUM-NIOBATE AND GLASS OPTICAL WAVE-GUIDES
YIYAN, A
CHAN, WK
GMITTER, TJ
FLOREZ, LT
JACKEL, JL
YABLONOVITCH, E
BHAT, R
HARBISON, JP
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1989, 1 (11) : 379 - 380

← 1 →