EFFECTS OF BORON DOPING ON THE SURFACE-MORPHOLOGY AND STRUCTURAL IMPERFECTIONS OF DIAMOND FILMS

被引:53
作者
WANG, XH
MA, GHM
WEI, Z
GLASS, JT
BERGMAN, L
TURNER, KF
NEMANICH, RJ
机构
[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA
[2] N CAROLINA STATE UNIV, DEPT PHYS, RALEIGH, NC 27695 USA
关键词
D O I
10.1016/0925-9635(92)90109-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reports the surface morphology and structural imperfection of boron-doped diamond films prepared by microwave plasma enhanced chemical vapor deposition. It was found that boron dopants improved the structural quality of diamond films. The surface morphology consisted mainly of the {111} facets. A significant enhancement of nucleation density and consequent decrease of grain size was observed with the addition of diborane in the gas phase. Raman spectroscopy indicated that, with the introduction of boron dopants, the integrated intensity of the diamond peak at 1332 cm-1 increased relative to the intensity of the non-diamond peak at about 1500 cm-1, and the full-width at half maximum of the 1332 cm-1 peak decreased. In addition, the 1.681 eV (738 nm) photoluminescence peak related to point defects was effectively reduced, or even eliminated by the boron dopants. Finally, transmission electron microscopy studies found that the densities of planar defects (mainly stacking faults and microtwins) also decreased with the boron addition. © 1992.
引用
收藏
页码:828 / 835
页数:8
相关论文
共 37 条
[1]   MECHANISM OF SELF-DIFFUSION IN DIAMOND [J].
BERNHOLC, J ;
ANTONELLI, A ;
DELSOLE, TM ;
BARYAM, Y ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1988, 61 (23) :2689-2692
[2]  
CAREY FA, 1977, ADV ORGANIC CHEM B, P100
[3]   ENHANCEMENT OF SILICON CHEMICAL VAPOR-DEPOSITION RATES AT LOW-TEMPERATURES [J].
CHANG, CA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) :1245-1247
[4]   ELECTRON-MICROSCOPY OF THE GROWTH FEATURES AND CRYSTAL-STRUCTURES OF FILAMENT ASSISTED CVD DIAMOND FILMS [J].
CLAUSING, RE ;
HEATHERLY, L ;
MORE, KL ;
BEGUN, GM .
SURFACE & COATINGS TECHNOLOGY, 1989, 39 (1-3) :199-210
[5]  
DAVIES G, 1977, CHEM PHYS CARBON, P1
[6]   OPTICAL ABOSRPTION OF ELECTRON-IRRADIATED SEMICONDUCTING DIAMOND [J].
DYER, HB ;
FERDINANDO, P .
BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (03) :419-+
[7]   STUDIES OF NUCLEATION AND GROWTH-MORPHOLOGY OF BORON-DOPED DIAMOND MICROCRYSTALS BY SCANNING TUNNELING MICROSCOPY [J].
EVERSON, MP ;
TAMOR, MA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03) :1570-1576
[8]   PROPERTIES OF BORON-DOPED EPITAXIAL DIAMOND FILMS [J].
FUJIMORI, N ;
NAKAHATA, H ;
IMAI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (05) :824-827
[9]   CHARACTERIZATION OF CONDUCTING DIAMOND FILMS [J].
FUJIMORI, N ;
IMAI, T ;
DOI, A .
VACUUM, 1986, 36 (1-3) :99-102
[10]   ELECTRICAL CHARACTERISTICS OF SCHOTTKY DIODES FABRICATED USING PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS [J].
GILDENBLAT, GS ;
GROT, SA ;
WRONSKI, CR ;
BADZIAN, AR ;
BADZIAN, T ;
MESSIER, R .
APPLIED PHYSICS LETTERS, 1988, 53 (07) :586-588