ENHANCEMENT OF SILICON CHEMICAL VAPOR-DEPOSITION RATES AT LOW-TEMPERATURES

被引：39

作者：

CHANG, CA ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 08期

关键词：

D O I：

10.1149/1.2133045

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1245 / 1247

页数：3

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