ENHANCED CRYSTALLINITY OF LOW-TEMPERATURE-DEPOSITED SILICON FILMS ON GRAPHITE SUBSTRATES

被引：8

作者：

CHANG, CA

SIEKHAUS, WJ

机构：

[1] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB,DIV ENERGY & ENVIRONM,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 03期

关键词：

D O I：

10.1063/1.88996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：208 / 210

页数：3

相关论文

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CHANG, CA
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[2] ENHANCED CRYSTALLINITY OF SILICON FILM DEPOSITED AT LOW-TEMPERATURE
CHANG, CA
SIEKHAUS, WJ
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[3] CHANG CC, UNPUBLISHED
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[J]. APPLIED PHYSICS LETTERS, 1976, 28 (07) : 365 - 367
[5] Hultgren RR, 1973, SELECTED VALUES THER
[6] REACTION BETWEEN SILICA AND ALUMINUM
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : 430 - 434
[7] SPACE RI, 1960, P C SILICON CARBIDE