ENHANCED CRYSTALLINITY OF SILICON FILM DEPOSITED AT LOW-TEMPERATURE

被引：13

作者：

CHANG, CA

SIEKHAUS, WJ

KAMINSKA, T

HUO, DTC

机构：

[1] UNIV CALIF,INORG MAT RES DIV,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[2] UNIV CALIF,COLL ENGN,DEPT MAT SCI & ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 04期

关键词：

D O I：

10.1063/1.88106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：178 / 180

页数：3

共 7 条

[1]

CHANG CC, UNPUBLISHED

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NIELSEN, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) :957-&

[3]

Hultgren RR, 1973, SELECTED VALUES THER

[4] PRECIPITATION OF SI FROM AL METALLIZATION OF INTEGRATED-CIRCUITS [J].

MCCALDIN, JO ;

SANKUR, H .

APPLIED PHYSICS LETTERS, 1972, 20 (04) :171-&

[5] CRYSTAL-GROWTH OF SILICON AND GERMANIUM IN METAL-FILMS [J].

OTTAVIANI, G ;

SIGURD, D ;

MARRELLO, V ;

MCCALDIN, JO ;

MAYER, JW .

SCIENCE, 1973, 180 (4089) :948-949

[6] REACTION BETWEEN SILICA AND ALUMINUM [J].

PRABRIPUTALOONG, K ;

PIGGOTT, MR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) :430-434

[7] SOLID-PHASE EPITAXIAL-GROWTH OF SI MESAS FROM AL METALLIZATION [J].

SANKUR, H ;

MCCALDIN, JO ;

DEVANEY, J .

APPLIED PHYSICS LETTERS, 1973, 22 (02) :64-66

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