CRYSTAL-GROWTH OF SILICON AND GERMANIUM IN METAL-FILMS

被引：17

作者：

OTTAVIANI, G ^{[1
]}

SIGURD, D ^{[1
]}

MARRELLO, V ^{[1
]}

MCCALDIN, JO ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH, PASADENA, CA 91109 USA

来源：

SCIENCE | 1973年 / 180卷 / 4089期

关键词：

D O I：

10.1126/science.180.4089.948

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：948 / 949

页数：2

共 11 条

[1]

BROPHY JH, 1964, STRUCTURE PROPERTIES, V2

[2] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J].

CHEN, HS ;

TURNBULL, D .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :4214-&

[3] A HIGH DENSITY FORM OF AMORPHOUS GE [J].

DONOVAN, TM ;

ASHLEY, EJ ;

SPICER, WE .

PHYSICS LETTERS A, 1970, A 32 (02) :85-&

[4]

DONOVAN TM, 1970, THESIS STANFORD U

[5]

Henisch H. K., 1970, CRYSTAL GROWTH GELS

[6]

LAUDISE RA, 1971, ANNU REV MATER SCI, V1, P253

[7] SOLID-PHASE EPITAXIAL-GROWTH OF GE LAYERS [J].

MARRELLO, V ;

MAYER, JW ;

CAYWOOD, JM ;

NICOLET, MA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02) :531-&

[8] PRECIPITATION OF SI FROM AL METALLIZATION OF INTEGRATED-CIRCUITS [J].

MCCALDIN, JO ;

SANKUR, H .

APPLIED PHYSICS LETTERS, 1972, 20 (04) :171-&

[9] MICROANALYSIS OF MATERIALS BY BACKSCATTERING SPECTROMETRY [J].

NICOLET, MA ;

MITCHELL, IV ;

MAYER, JW .

SCIENCE, 1972, 177 (4052) :841-&

[10] FORMATION OF INJECTING AND BLOCKING CONTACTS ON HIGH-RESISTIVITY GERMANIUM [J].

OTTAVIANI, G ;

NICOLET, MA ;

CAYWOOD, JM ;

MAYER, JW ;

MARRELLO, V .

APPLIED PHYSICS LETTERS, 1972, 20 (08) :323-+

← 1 2 →