ENERGETICS AND STRUCTURE OF ORDERED SB OVERLAYERS AND SB CLUSTERS ON GAAS(110) PROBED BY AB-INITIO CALCULATIONS

被引:14
作者
BECHSTEDT, F
SCHMIDT, WG
WENZIEN, B
机构
[1] Friedrich-Schiller-Universität, Jena, 07743
来源
EUROPHYSICS LETTERS | 1994年 / 25卷 / 05期
关键词
D O I
10.1209/0295-5075/25/5/008
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Ab initio density-functional theory calculations of Sb-covered GaAs(110) surfaces are performed for different coverages, different 2D translational symmetries, and various structural models. The highest adsorption energy is found for monolayer coverage (THETA = 1), 1 x 1 translational symmetry, and the epitaxial continued layer structure. The energy gains for similar structures in the submonolayer case with lower translational symmetry are slightly smaller. Our results indicate a tendency for the formation of anisotropic islands for THETA < 1 growing together in an ordered overlayer for THETA = 1.
引用
收藏
页码:357 / 362
页数:6
相关论文
共 26 条
[1]  
BERTONI CM, 1983, PHYS REV B, V27, P1254
[2]   UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY [J].
CAR, R ;
PARRINELLO, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (22) :2471-2474
[3]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[4]   UNOCCUPIED SURFACE-STATES OF (1X1) SB OVERLAYERS ON GAAS(110) AND INP(110) [J].
DRUBE, W ;
HIMPSEL, FJ .
PHYSICAL REVIEW B, 1988, 37 (02) :855-857
[5]   DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].
DUKE, CB ;
PATON, A ;
FORD, WK ;
KAHN, A ;
CARELLI, J .
PHYSICAL REVIEW B, 1982, 26 (02) :803-814
[6]   ENERGIES OF ATOMS AND SOLIDS WITHIN THE LOCAL-DENSITY APPROXIMATION [J].
FARID, B ;
NEEDS, RJ .
PHYSICAL REVIEW B, 1992, 45 (03) :1067-1073
[7]   FERMI-LEVEL PINNING AT THE SB/GAAS(110) SURFACE STUDIED BY SCANNING TUNNELING SPECTROSCOPY [J].
FEENSTRA, RM ;
MARTENSSON, P .
PHYSICAL REVIEW LETTERS, 1988, 61 (04) :447-450
[8]  
FEENSTRA RM, 1989, MAT RES S C, V138, P305
[9]  
FEENSTRA RM, 1989, PHYS REV B, V39, P7744
[10]   DYNAMIC LOW-ENERGY ELECTRON-DIFFRACTION ANALYSIS OF BISMUTH AND ANTIMONY EPITAXY ON GAAS(110) [J].
FORD, WK ;
GUO, T ;
LESSOR, DL ;
DUKE, CB .
PHYSICAL REVIEW B, 1990, 42 (14) :8952-8965