INFRARED ILLUMINATORS OF GALLIUM ARSENIDE WITH HIGH EFFICIENCY

被引:3
作者
LINDEN, KJ
机构
来源
INFRARED PHYSICS | 1970年 / 10卷 / 03期
关键词
D O I
10.1016/0020-0891(70)90017-5
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
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页码:141 / &
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共 23 条
[1]  
ALFEROV ZI, 1939, SOVIET PHYS SEMICOND, V3, P471
[2]   DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS [J].
AUKERMAN, LW ;
MILLEA, MF ;
MCCOLL, M .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :685-&
[3]   P-N JUNCTION LASERS [J].
BURNS, G ;
NATHAN, MI .
PROCEEDINGS OF THE IEEE, 1964, 52 (07) :770-+
[4]   LONG-WAVELENGTH INFRARED PB1-XSNXTE DIODE LASERS [J].
BUTLER, JF ;
HARMAN, TC .
APPLIED PHYSICS LETTERS, 1968, 12 (10) :347-&
[5]   THERMAL CONDUCTIVITY OF GAAS AND GAAS1-XPX LASER SEMICONDUCTORS [J].
CARLSON, RO ;
SLACK, GA ;
SILVERMAN, SJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) :505-+
[6]   PHOTOMETRIC FIGURES OF MERIT FOR SEMICONDUCTOR LUMINESCENT SOURCES OPERATING IN SPONTANEOUS MODE [J].
CARR, WN .
INFRARED PHYSICS, 1966, 6 (01) :1-&
[7]  
DEAN PJ, 1968, T METALL SOC AIME, V242, P384
[8]   TEMPERATURE EFFECTS IN COHERENT GAAS DIODES [J].
ENGELER, WE ;
GARFINKEL, M .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2746-&
[9]  
Hall R. N., 1959, P IEEE, V106, P923, DOI [DOI 10.1049/PI-B-2.1959.0171, 10.1049/pi-b-2.1959.0171]
[10]   COHERENT LIGHT EMISSION FROM P-N JUNCTIONS [J].
HALL, RN .
SOLID-STATE ELECTRONICS, 1963, 6 (05) :405-&