SUBMILLIAMPERE-THRESHOLD 1.5-MU-M STRAINED-LAYER MULTIPLE QUANTUM-WELL LASERS

被引:39
作者
ZAH, CE
FAVIRE, FJ
BHAT, R
MENOCAL, SG
ANDREADAKIS, NC
HWANG, DM
KOZA, M
LEE, TP
机构
[1] Bellcore, Red Bank
关键词
D O I
10.1109/68.62007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied the effect of high-reflection facet coatings on strained-layer multiple quantum well lasers and made, for the first time, submilliampere-threshold lasers in the 1.5-mu-m wavelength region with a short cavity and high-reflection-coated facets. As a result of the compressive strain, the threshold current density is loss limited instead of transparency limited. By the use of the step graded-index separate confinement heterostructure to reduce the waveguide loss, a threshold current density of 550 A/cm2 was measured on 30-mu-m wide broad area lasers with 1-mm long cavity.
引用
收藏
页码:852 / 853
页数:2
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