MEASUREMENT OF THE LATTICE-CONSTANT OF SI-GE HETEROEPITAXIAL LAYERS GROWN ON A SILICON SUBSTRATE

被引：10

作者：

AHARONI, H

机构：

来源：

关键词：

D O I：

10.1016/0042-207X(78)90014-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：571 / 578

页数：8

共 10 条

[1] SOME PRACTICAL REMARKS ON DESIGN OF EXPERIMENTAL SYSTEMS FOR EXPITAXIAL GROWTH OF SI, GE AND SI-GE
AHARONI, H
BARLEV, A
[J]. VACUUM, 1974, 24 (02) : 89 - 93
[2] DEFECTS IN EPITAXIAL LAYERS OF SILICON-GERMANIUM GROWN ON SILICON SUBSTRATES
AHARONI, H
BARLEV, A
MARGALIT, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 254 - &
[3] AHARONI H, 1977, ISRAEL J TECH, V14
[4] AHARONI H, 1972, THIN SOLID FILMS, V12, P313
[5] AHARONI H, 1976, 2ND BI ANN S JOINT C, P18
[6] [Anonymous], 1961, XRAY METALLOGRAPHY
[7] Cullity BD., 1956, ELEMENTS XRAY DIFFRA
[8] OXIDATION OF SILICON-GERMANIUM ALLOYS
MARGALIT, S
BARLEV, A
AHARONI, H
NEUGROSCHEL, A
KUPER, AB
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 288 - +
[9] MARGALIT S, 1971, GROWTH SILICON GERMA
[10] WIENERAVNEAR E, 1977, B AM PHYS SOC, V22, P316