PHOTOEMISSION-STUDY OF THE BAND BENDING AND CHEMISTRY OF SODIUM SULFIDE ON GAAS (100)

被引：56

作者：

SPINDT, CJ ^{[1
]}

BESSER, RS ^{[1
]}

CAO, R ^{[1
]}

MIYANO, K ^{[1
]}

HELMS, CR ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] WATKINS JOHNSON CO,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.100744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1148 / 1150

页数：3

共 4 条

[1]

BESSER RS, 1988, APPL PHYS LETT, V52, P20

[2] CONTROL OF FERMI LEVEL PINNING AND RECOMBINATION PROCESSES AT GAAS-SURFACES BY CHEMICAL AND PHOTOCHEMICAL TREATMENTS [J].

HASEGAWA, H ;

ISHII, H ;

SAWADA, T ;

SAITOH, T ;

KONISHI, S ;

LIU, YA ;

OHNO, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1184-1192

[3] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

SANDROFF, CJ ;

NOTTENBURG, RN ;

BISCHOFF, JC ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35

[4] THE ADVANCED UNIFIED DEFECT MODEL FOR SCHOTTKY-BARRIER FORMATION [J].

SPICER, WE ;

LILIENTALWEBER, Z ;

WEBER, E ;

NEWMAN, N ;

KENDELEWICZ, T ;

CAO, R ;

MCCANTS, C ;

MAHOWALD, P ;

MIYANO, K ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1245-1251

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