DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION

被引：732

作者：

SANDROFF, CJ

NOTTENBURG, RN

BISCHOFF, JC

BHAT, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.98877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：33 / 35

页数：3

共 12 条

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