MONO-CRYSTALLINE ALUMINUM OHMIC CONTACT TO N-GAAS BY H2S ADSORPTION

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[2] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653

[3] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[4] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &

[5] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J]. SURFACE SCIENCE, 1978, 77 (01) : L162 - L166

[6] MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11): : 1153 - 1155

[7] INTRINSIC AND DEFECT-INDUCED SURFACE-STATES OF CLEAVED GAAS(110) [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (17) : 1158 - 1161

[8] STEPS ON III-V(110) FACES - THEORETICAL INVESTIGATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1236 - 1237

[9] STOICHIOMETRY EFFECTS ON SURFACE-PROPERTIES OF GAAS(100) GROWN INSITU BY MBE [J]. SURFACE SCIENCE, 1980, 99 (01) : 121 - 131

[10] MASSIES J, 1980, REV TECH THOMSON, V12, P281

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[2] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653

[3] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[4] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &

[5] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J]. SURFACE SCIENCE, 1978, 77 (01) : L162 - L166

[6] MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11): : 1153 - 1155

[7] INTRINSIC AND DEFECT-INDUCED SURFACE-STATES OF CLEAVED GAAS(110) [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (17) : 1158 - 1161

[8] STEPS ON III-V(110) FACES - THEORETICAL INVESTIGATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1236 - 1237

[9] STOICHIOMETRY EFFECTS ON SURFACE-PROPERTIES OF GAAS(100) GROWN INSITU BY MBE [J]. SURFACE SCIENCE, 1980, 99 (01) : 121 - 131

[10] MASSIES J, 1980, REV TECH THOMSON, V12, P281