MONO-CRYSTALLINE ALUMINUM OHMIC CONTACT TO N-GAAS BY H2S ADSORPTION

被引：73

作者：

MASSIES, J

CHAPLART, J

LAVIRON, M

LINH, NT

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 09期

关键词：

D O I：

10.1063/1.92473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：693 / 695

页数：3

共 22 条

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[16] SURFACE ELECTRONIC-STRUCTURE OF 3-5 COMPOUNDS AND THE MECHANISM OF FERMI LEVEL PINNING BY OXYGEN (PASSIVATION) AND METALS (SCHOTTKY BARRIERS)
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[18] ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS
STALL, R
WOOD, CEC
BOARD, K
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[J]. ELECTRONICS LETTERS, 1979, 15 (24) : 800 - 801
[19] INSITU OHMIC-CONTACT FORMATION TO N-GAAS AND P-GAAS BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1022 - 1025
[20] CONTACT POTENTIAL DIFFERENCES FOR 3-5 COMPOUND SURFACES
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